Wirelike Growth of Si on an Au/Si(111) Substrate by Gas Source Molecular Beam Epitaxy

Growth of Si whiskers on Au/Si(1 1 1) substrate by gas source molecular beam epitaxy (MBE)

The vapor—liquid—solid growth of Si whiskers from disilane has been studied in a gas source MBE system. The wire-like Si crystals are grown on Si(1 1 1) substrates in a temperature range of 600—800°C, a disilane pressure between 1]10~4 and 1]10~7 Torr, and using Au as a growth-promoting agent. The morphology of the Si whiskers is investigated. It is found that the growth rate of the vertical wi...

Ag buffer layer effect on magnetization reversal of epitaxial Co films

Nano-sized Ag(111) islands were first prepared by using molecular beam epitaxy technique on dilutedhydrofluoric acid etched Si(111) substrate. Epitaxial Co films were then grown onto the Ag films at 100 °C to decrease interdiffusion. The Ag buffer layer designed to form isolated islands with {111} sidewalls on the Si(111) substrate, and provided Co films (111) texture growth to study the correl...

Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy

Using out-of-plane and in-plane X-ray diffraction techniques, we have investigated the structure at the interface between GaAs nanowires [NWs] grown by Au-assisted molecular beam epitaxy and the underlying Si(111) substrate. Comparing the diffraction pattern measured at samples grown for 5, 60, and 1,800 s, we find a plastic strain release of about 75% close to the NW-to-substrate interface eve...

Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy

Different void shapes in Si at the SiC thin film / Si ( 111 ) substrate interface

The shape of interfacial voids formed in the epitaxial SiC/Si(111) heterosystem just underneath the SiC film has been investigated using optical microscopy and transmission electron microscopy (TEM). SiC films are grown on Si(111) substrates at two different substrate temperatures (specimen type 1 at 850°C, specimen type 2 at 1050°C) using solid-source molecular-beam epitaxy (MBE). At 850°C sub...